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AssigneeRodel Holdings, Inc.
InventorsVikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
Estimating the term…
A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.
A composition useful for chemical/mechanical planarization;
A composition useful for chemical/mechanical planarization of a semiconductor substrate having silicon dioxide underlying a layer of metal, the metal to be removed by polishing with the composition and a polishing pad, the composition comprising:
Dependencies are inferred from the claim text.