Chemical mechanical polishing method for copper
AssigneeUnited Microelectronics Corp.
InventorsChia-Lin Hsu, Teng-Chun Tsai, Yung-Tsung Wei, Ming-Sheng Yang
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Abstract
A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.
Claims38
A chemical-mechanical polishing method for removing a copper oxide layer and a copper layer above a substrate using a slurry, the slurry comprising of:
- an aqueous solution having polishing particles at a first concentration;
- and
- a polishing slurry having the polishing particles at a second concentration, wherein
- the first concentration is higher than the second concentration, and the aqueous solution is used prior to the polishing slurry.
A chemical-mechanical polishing method for removing a copper oxide layer and a copper layer above a substrate using slurry, the slurry comprising of:
- an aqueous solution having polishing particles at a first concentration;
- and
- a polishing slurry free of the polishing particles, wherein
- the aqueous solution is used prior to the polishing slurry.
A chemical-mechanical polishing method for removing a copper oxide layer and a copper layer above a substrate using a slurry, the slurry comprising of:
- an aqueous solution having a chelating agent at a first concentration;
- and
- a polishing slurry having the chelating agent at a second concentration, wherein
- the first concentration is higher than the second concentration.
A chemical-mechanical polishing method for removing a copper oxide layer and a copper layer above a substrate using slurry, the slurry comprising of:
- an aqueous solution having a chelating agent at a first concentration;
- and
- a polishing slurry free of the chelating agent.
The polishing method of claim wherein the first concentration is not less than about 5%.
Dependencies are inferred from the claim text.