Automated control of metal thickness during film deposition
AssigneeAdvanced Micro Devices, Inc.
InventorsPaul R. Besser, Paul L. King
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Abstract
A novel method of automatically controlling thickness of a metal film during film deposition in a deposition chamber. The method involves producing an X-ray beam directed to the metal film deposited on a wafer in a deposition chamber, and detecting X-ray fluorescence of the metal film. The thickness of the metal film determined based on the detected X-ray fluorescence is compared with a preset value to continue deposition if the determined thickness is less than the preset value. Deposition is stopped when the determined thickness reaches the preset value.
Claims7
Method of monitoring a parameter of a metal film being deposited on a semiconductor wafer, the method comprising the steps of:
- producing an X-ray beam directed to the metal film during deposition of the metal film on the wafer in a deposition chamber,
- detecting X-ray fluorescence of the metal film to determine the parameter of the metal film, and
- comparing the determined parameter with a preset value to continue deposition of the metal film if the determined parameter differs from the preset value.
Method of automatically controlling thickness of a metal film being deposited on a semiconductor wafer, the method comprising the steps of:
- producing an X-ray beam directed to the metal film during deposition of the metal film on the wafer in a deposition chamber,
- determining the thickness of the metal film based on detected X-ray fluorescence of the metal film, and
- comparing the determined thickness of the metal film with a preset value to continue the deposition of the metal film if the determined thickness is less than the preset value.
Dependencies are inferred from the claim text.