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US 6,611,449 B1Granted
Contact for memory cells
AssigneeInfineon Technologies AG
InventorAndreas Hilliger
Life of this patent
Estimating the term…
Abstract
A memory cell which provides a diffusion path for hydrogen to the transistor is disclosed. The diffusion path is provided by forming a contact in which the upper section overlaps the lower section, thus creating a gap that serve as a hydrogen diffusion path. The hydrogen diffusion path is necessary for annealing the damage to the gate oxide.
Claims12
A memory cell comprising:
- a transistor having first and second diffusion regions and a gate formed on a substrate;
- a capacitor having a dielectric layer between first and second electrodes;
- a first plug coupled to the first electrode and first diffusion region;
- a dielectric layer covering the transistor and capacitor;
- and
- a second plug formed in the dielectric layer, the second plug is coupled to the second diffusion region, the second plug comprising first and second sections, wherein the second section overlaps the first section, the overlap creates a gap, the gap serves as a diffusion path for hydrogen to the transistor.
3 more elements
Dependencies are inferred from the claim text.