ESD protection circuit
AssigneeHyundai Electronics Industries Co., Ltd.
InventorTae Sig Chang
Life of this patent
Estimating the term…
Abstract
ESD protection circuit which can minimize fluctuation of a gate voltage with an ESD input voltage, for improving an ESD protection capability, including a first transistor connected to an input pad for discharging an ESD charge, a capacitor and a diode connected to the input pad for applying a gate voltage to a gate of the first transistor to improve a bipolar driving capability of the first transistor, a second transistor for controlling drive of the first transistor when the chip is operative, and a resistor for delaying transmission of an ESD charge to an inner circuit when the ESD charge is received at the input pad.
Claims18
An ESD (Electro-Static Discharge) protection circuit comprising:
- a first transistor connected to an input pad for discharging an ESD charge;
- a capacitor and a diode connected to the input pad for applying a gate voltage to a gate of the first transistor to improve a bipolar driving capability of the first transistor;
- a second transistor for controlling a drive of the first transistor when a chip is operative, the second transistor having a drain connected to a contact of the capacitor and the diode, a source connected to a ground terminal, and a gate connected to a power source;
- and
- a resistor for delaying transmission of the ESD charge to an inner circuit when the ESD charge is received at the input pad.
A circuit, comprising:
- a capacitor coupled to a pad;
- a diode coupled between the capacitor and a first reference voltage;
- a first transistor coupled between the pad and a contact point between the capacitor and the diode;
- and
- a second transistor coupled to the contact point and having a control electrode directly connected to a second reference voltage greater than the first reference voltage.
Dependencies are inferred from the claim text.