Exposure apparatus, semiconductor device, and photomask
AssigneesAsahi Glass Company, Limited, Semiconductor Leading Edge Technologies, Inc.
InventorsTohru Ogawa, Hideo Hosono, Shinya Kikugawa, Yoshiaki Ikuta, Akio Masui, Noriaki Shimodaira, Shuhei Yoshizawa
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Abstract
An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
Claims4
An exposure apparatus employing a fluorine laser as a light source, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, and said synthetic quartz glass for an optical member has a absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm;
- wherein the synthetic quartz glass for an optical member has an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
A photomask employing a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
Dependencies are inferred from the claim text.