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US 6,611,038 B2Granted
Semiconductor wafer isolation structure formed by field oxidation
AssigneeMicron Technology, Inc.
InventorsViju K. Mathews, Nanseng Jeng, Pierre C. Fazan
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AssigneeMicron Technology, Inc.
InventorsViju K. Mathews, Nanseng Jeng, Pierre C. Fazan
Estimating the term…
A method of forming isolation structures in semiconductor substrates comprising exposing a region of the semiconductor simultaneously to a transforming agent and to a viscosity reducing agent so that the transforming agent transforms a portion of the substrate into an isolation structure and the viscosity reducing agent reduces the viscosity of the isolation structure during formation. In one embodiment, a silicon substrate is exposed to oxygen in the presence of fluorine so that a silicon oxide isolation region is formed. The fluorine reduces the viscosity of the silicon oxide isolation region during formation which results in less lateral, bird's beak encroachment under adjacent masking stacks and also results in lower internal stress in the isolation region during formation. The lower internal stress and the lessened lateral encroachment result in thicker and improved isolation regions.
A semiconductor substrate comprising:
A semiconductor substrate comprising:
An integrated circuit comprising:
An integrated circuit including a semiconductor substrate, said semiconductor substrate comprising:
Dependencies are inferred from the claim text.