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US 6,611,024 B2Granted
Method of forming PID protection diode for SOI wafer
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsTing Cheong Ang, Shyue Fong Quek, Sang Yee Loong, Jun Song
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Abstract
An integrated microelectronics semiconductor circuit fabricated on a silicon-on-insulator (SOI) type substrate can be protected from unwanted current surges and excessive heat buildup during fabrication by means of a heat-dissipating, protective plasma-induced-damage (PID) diode. The present invention fabricates such a protective diode as a part of the overall scheme in which the transistor devices are formed.
Claims8
An integrated semiconductor microelectronics circuit formed on an SOI substrate and protected by a heat-dissipating PID diode, comprising:
- an SOI substrate, said substrate comprising upper and lower layers of silicon, with an insulating layer formed therebetween;
- a plurality of nMOS and pMOS type transistor devices with silicided source/drain and gate electrode contacts, formed in the upper silicon layer of said SOI substrate;
- a PID protective diode formed as a junction in the lower silicon layer of said SOI substrate;
- an ILD formed over said circuit, through which pass conducting contacts to the transistor devices and PID protective diode.
- a heat and charge dissipating metal layer formed over the ILD layer, said metal layer being in electrical contact with the contact from the PID diode, but not being in electrical contact with the contacts of said transistors.
2 more elements
Dependencies are inferred from the claim text.