Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating film formed on said semiconductor substrate;
• a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode;
• and
• a first hydrogen barrier film,
• wherein said ferroelectric capacitor is buried in a groove formed in said insulating film, and said first hydrogen barrier film is provided inside said groove to cover at least the bottom surface and side surfaces of said ferroelectric capacitor.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating film formed on said semiconductor substrate;
• a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on said insulating film;
• and
• a first hydrogen barrier film not containing titanium, said first hydrogen barrier film being interposed between said lower electrode and said insulating film.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating film formed on said semiconductor substrate;
• a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on said insulating film;
• and
• a first hydrogen barrier film not containing titanium, said ferroelectric film and said lower electrode having a larger area than said upper electrode, and said first hydrogen barrier film extending at least from the upper surface of said upper electrode along side surfaces thereof onto the surface of said ferroelectric film extending beyond perimeters of said upper electrode.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating film formed on said semiconductor substrate;
• a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on said insulating film;
• and
• a first hydrogen barrier film not containing titanium, said lower electrode having a larger area than said upper electrode and said ferroelectric film, and said first hydrogen barrier film extends from the upper surface of said upper electrode along side surfaces thereof and side surfaces of said ferroelectric film onto the surface of said lower electrode extending beyond perimeters of said ferroelectric film.