Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components

A method of forming an integrated circuit device having high quality passive components comprising:

• providing an active area of a silicon substrate where said passive components are to be fabricated;
• depositing a metal layer overlying said silicon substrate;
• annealing said metal layer wherein said metal layer reacts with said silicon substrate to form a metal silicide layer overlying said silicon substrate wherein said silicon substrate and overlying said metal silicide layer together comprise a Schottky diode completely covering said active area;
• covering said Schottky diode with a dielectric layer;
• and
• forming said passive components overlying said passivation layer wherein said Schottky diode reduces substrate noise resulting in high quality of said passive components in the fabrication of said integrated circuit device.

A integrated circuit device having high quality passive components comprising:

• a Schottky diode completely covering an active area of a silicon substrate;
• a dielectric layer overlying said Schottky diode;
• and
• said passive components overlying said dielectric layer wherein said Schottky diode reduces substrate noise resulting in high quality of said passive components.