US 6,608,347 B2 · Semiconductor device and method of manufacturing the same

Abstract

A gate insulating film composed of silicon oxide and a floating gate electrode composed of polysilicon are formed sequentially on a P-type silicon substrate. A capacitance insulating film composed of silicon oxide and a control gate electrode composed of polysilicon are formed on the floating gate electrode. First spacer films, each composed of silicon oxide and formed over the respective side faces of individual components, and second spacer films, each composed of silicon nitride and formed on the respective first spacer films, are also provided. Even when a high-temperature heat treatment is performed in an oxidizing atmosphere, oxygen is prevented from being supplied to both end portions of the capacitance insulating film and the control gate electrode, which suppresses an increase in thickness of the capacitance insulating film at both end portions thereof.

Claims16

Dependent claims

A semiconductor device, comprising;

a semiconductor substrate;
a gate insulating film provided on said semiconductor substrate;
a first conductive film provided on said gate insulating film;
a dielectric film, which is provided on said first conductive film and contains an oxidizing material;
a second conductive film provided on said dielectric film;
a first spacer film composed of an oxide film covering respective side fates of said gate insulating film, said first conductive film, said dielectric film, and said second conductive film;
and
a second spacer film covering the entire exposed portion of said first spacer film and having a function of preventing oxygen from passing therethrough.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims16