Rough (high surface area) electrode from Ti and TiN, capacitors and semiconductor devices including same
AssigneeMicron Technology, Inc.
InventorsGaro J. Derderian, Gurtej S. Sandhu
Life of this patent
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Abstract
A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.
Claims16
A storage node comprising:
- a discontinuous first material layer on a substrate, wherein the discontinuous first material layer defines at least one area exposing a portion of the substrate therethrough;
- and
- a second material layer over the discontinuous first material layer and the at least one area, wherein the second material layer exhibits a first thickness over the discontinuous first material layer and a second, lesser thickness over the at least one area defined by the discontinuous first material layer.
A random access memory device comprising:
- at least one memory cell having at least one capacitor storage node wherein the at least one capacitor storage node comprises:
- a discontinuous first material layer on a substrate, wherein the discontinuous first material layer defines at least one area exposing a portion of the substrate therethrough;
- and
- a second material layer over the discontinuous first material layer and the at least one area, wherein the second material layer exhibits a first thickness over the discontinuous first material layer and a second, lesser thickness over the at least one area defined by the discontinuous first material layer.
Dependencies are inferred from the claim text.