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US 6,607,993 B1Granted
Method using ultraviolet radiation for integrated circuit manufacturing
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsRonald Dickinson, Yeow Meng Teo, Dong Xiang Qi, Rajan Rajgopal
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Abstract
A method is provided for manufacturing an integrated circuit including a substrate with a gate layer and a gate dielectric provided on the substrate. The gate layer is formed into a gate using a process that imposes a charge in the gate dielectric. The substrate, gate, and gate dielectric are irradiated to discharge the charge across the gate dielectric.
Claims18
A method for manufacturing an integrated circuit comprising:
- providing a substrate having a gate layer and a gate dielectric thereon;
- forming the gate layer into a gate using a process that imposes a charge across the gate dielectric;
- and
- irradiating the substrate, the gate, and the gate dielectric to discharge the charge across the gate dielectric by application of ultraviolet radiation from about 150 to about 400 nanometers at an intensity of about 120 mw/cm2 to about 200 mw/cm2.
1 more element
A method for manufacturing an integrated circuit comprising:
- providing a semiconductor substrate having a silicon gate layer and a gate oxide thereon;
- forming the silicon gate layer into a silicon gate using a process that imposes a charge across the gate oxide;
- and
- irradiating the semiconductor substrate, the silicon gate, and the gate oxide to discharge the charge across the gate oxide using ultraviolet radiation by application of ultraviolet radiation from about 150 to about 400 nanometers at an intensity of about 120 mw/cm2 to about 200 mw/cm2.
1 more element
Dependencies are inferred from the claim text.