Semiconductor device and method of producing the same

A method of producing a gate electrode included in a MOS transistor, comprising

• (a) sequentially forming a polysilicon film, a barrier metal film and a metal nitride layer having a high melting point on a gate insulation film in this order to thereby constitute a conductive film having a laminate structure;
• (b) patterning said conductive film to thereby form the gate electrode;
• (c) implanting ions in a source and a drain region in a semiconductor layer by using the gate electrode as a mask;
• and
• (d) effecting annealing to thereby activate resulting ion implanted layers and lower a resistance of said metal nitride film at the same time;
• wherein said barrier metal film is comprised of titanium nitride and said barrier metal film forming is free of a separate annealing step;
• and
• wherein said barrier metal film consist essentially of a single layer structure.

A method of producing a gate electrode included in a MOS transistor, comprising:

• (a) sequentially forming a polysilicon film, a barrier metal film and a metal nitride film having a high melting point on a gate insulation film in this order to thereby constitute a conductive film having a laminate structure;
• (b) annealing said conductive film to thereby lower a resistance of said metal nitride layer and activate an ion implanted layer at the same time;
• and
• (c) patterning said conductive film to thereby form the gate electrode;
• wherein said barrier metal film is comprised of titanium nitride and said barrier metal film forming is free of a separate annealing step, and
• wherein said barrier metal film consist essentially of a single layer structure.