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US 6,607,945 B2Granted
Laser-assisted silicide fuse programming
AssigneeAdvanced Micro Devices, Inc.
InventorTing Yiu Tsui
Life of this patent
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Abstract
A method is provided, the method comprising programming a silicide fuse by passing a current through the silicide fuse while substantially simultaneously irradiating the silicide fuse with a laser.
Claims34
A method comprising:
- programming a silicide fuse by passing a current through the silicide fuse while substantially simultaneously irradiating the silicide fuse with a laser.
A method comprising:
- programming a plurality of silicide fuses by passing a current through at least one of the plurality of silicide fuses while substantially simultaneously irradiating the at least one of the plurality of silicide fuses with a laser.
A method comprising:
- forming a plurality of semiconductor devices;
- forming a plurality of silicide fuses between at least some of the plurality of semiconductor devices;
- and
- programming the plurality of silicide fuses by passing a current through at least one of the plurality of silicide fuses while substantially simultaneously irradiating the at least one of the plurality of silicide fuses with a laser.
1 more element
Dependencies are inferred from the claim text.