Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
AssigneeNGK Insulators, Ltd.
InventorsYuji Katsuda, Jun Yoshikawa, Masaaki Masuda, Chikashi Ihara
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Abstract
A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent. The sintered body contains an aluminum nitride phase and a samarium-aluminum complex oxide phase. The samarium-aluminum complex oxide phase forms intergranular layers with a low resistivity along the intergranular phase between aluminum nitride grains.
Claims75
A material having a volume resistivity at room temperature of not higher than 1×1013 Ω·cm, said material being composed of an aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and samarium-aluminum complex oxide phase, wherein said sintered body comprises aluminum nitride grains having a mean diameter of not lower than 3 μm.
An aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and SmAl11O18 phase, wherein said aluminum nitride sintered body comprises aluminum nitride grains with a mean diameter of not lower than 3 μm.
An aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and samarium-aluminum complex oxide phase with network microstructure, wherein said aluminum nitride sintered body comprises aluminum nitride grains with a mean diameter of not lower than 3 μm.
An aluminum nitride sintered body comprising samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent and at least one second rare earth element other than samarium, wherein the molar ratio of a converted content of said second rare earth element calculated as a rare earth oxide to said converted content of samarium calculated as samarium oxide is not higher than 2.0, wherein said aluminum nitride sintered body comprises aluminum nitride grains with a mean diameter of not lower than 3 μm.
A member used for the production of semiconductors, wherein at least a part of said member is made of an aluminum nitride sintered body containing samarium, and said sintered body contains aluminum nitride grains with a mean diameter of not lower than 3 μm.
A material having a volume resistivity at room temperature of not higher than 1×1013 Ω·cm, said material being composed of an aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and samarium-aluminum complex oxide phase,
- wherein said aluminum nitride sintered body contains one or more metal elements selected from the group consisting of metal elements belonging to groups IVA, VA, VIA, VIIA and VIIIA of the Periodic Table, and in a content calculated as a metal element of not lower than 0.01 weight percent.
An aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and SmAl11O18 phase,
- wherein said aluminum nitrided sintered body comprises one or more transition metal elements selected from the group consisting of metal elements belonging to groups IVA, VA, VIA, VIIA and VIIIA of the Periodic Table, and in a content calculated as a metal element of not lower than 0.01 weight percent.
An aluminum nitride sintered body containing samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent, said sintered body containing aluminum nitride phase and samarium-aluminum complex oxide phase with network microstructure,
- wherein said aluminum nitride sintered body comprises one or more transition metal elements selected from the group consisting of metal elements belonging to groups IVA, VA, VIA, VIIA and VIIIA of the Periodic Table, and in a content calculated as a metal element of not lower than 0.01 weight percent.
An aluminum nitride sintered body comprising samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent and at least one second rare earth element other than samarium, wherein the molar ratio of a converted content of said second rare earth element calculated as a rare earth oxide to said converted content of samarium calculated as samarium oxide is not higher than 2.0,
- wherein said aluminum nitride sintered body comprises one or more transition metal elements selected from the group consisting of metal elements belonging to groups IVA, VA, VIA, VIIA and VIIIA of the Periodic Table, and in a content calculated as a metal element of not lower than 0.01 weight percent.
A member used for the production of semiconductors, wherein at least a part of said member is made of an aluminum nitride sintered body containing samarium, wherein said sintered body contains one or more transition metal elements selected from the group consisting of metal elements belonging to groups IVA, VA, VIA, VIIA and VIIIA of the Periodic Table, and in a content calculated as a metal element of not lower than 0.01 weight percent.
Dependencies are inferred from the claim text.