Method for producing silicon single crystal
AssigneeSumitomo Metal Industries, Ltd.
InventorsHideki Fujiwara, Manabu Nishimoto, Isamu Miyamoto, Hiroshi Morita
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Abstract
A method for producing a silicon single crystal, the method being capable of suppressing the dislocation of a single crystal. When a silicon single crystal is produced by a Czochralski method in which a horizontal magnetic field or a cusp magnetic field is applied and the single crystal during growth is dislocated, the single crystal with dislocations is dissolved in a nonmagnetic field condition and thereafter a magnetic field is applied again to pull up the silicon single crystal. The flow rate of argon gas is designed to be 100 L/min or more and the pressure in a furnace is designed to be 6700 pa or less when the single crystal with dislocations is dissolved.
Claims4
A method for producing a silicon single crystal by a Czochralski method in which a magnetic field is applied, wherein in the case where dislocations are generated in the single crystal during growth, the single crystal with dislocations is dissolved without application of a magnetic field and thereafter a magnetic field is again applied while pulling the silicon single crystal.
Dependencies are inferred from the claim text.