Compositions for insulator and metal CMP and methods relating thereto
AssigneeRodel Holdings, Inc.
InventorsWesley D. Costas, James Shen, Glenn C. Mandigo, Terence M. Thomas, Craig D. Lack, Ross E. Barker, II
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Abstract
A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinity to surface groups on the semiconductor wafer surface. Another composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising a surfactant having a carbon chain backbone comprised of at least 16 carbon atoms.
Claims16
An aqueous polishing mixture for chemical mechanical polishing of semiconductor substrates, the mixture having a pH under 5.0 that comprises a blend of at least two polyacrylic acids, wherein a first polyacrylic acid has a low number average molecular weight of 20,000-100,000 and a second polyacrylic acid has a high number average molecular weight of 200,000-1,500,000, wherein the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 10:1 to 1:10.
An aqueous polishing mixture for chemical mechanical polishing of semiconductor substrates, the mixture having a pH under 5.0 that comprises
- a blend of at least two polyacrylic acids, wherein a first polyacrylic acid has a low number average molecular weight of 20,000-100,000 and a second polyacrylic acid has a high number average molecular weight of 200,000-1,500,000, wherein the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 10:1 to 1:10,
- up to 3.0% by weight abrasive particles,
- 1-15% by weight oxidizing agent,
- 50-5000 parts per million by weight of an inhibitor, and
- up to 3.0% by weight complexing agent.
Dependencies are inferred from the claim text.