Semiconductor device and method for manufacturing the same including forming a plurality of dummy convex regions on a matrix with a virtual linear line defining an angle

A semiconductor device comprising:

• a trench isolation region defining a first matrix direction and at least one first virtual linear line extending in a direction that traverses the first matrix direction, wherein the first matrix direction and the first virtual linear line define an angle of 2 to 40 degrees;
• and
• a plurality of dummy convex regions in the trench isolation region, wherein the dummy convex regions are disposed on the at least one first virtual linear line;
• wherein the trench isolation region includes a prohibited area where the dummy convex regions are not formed, and all the dummy convex regions in the trench isolation region have the same shape as each other in plan.

A semiconductor device comprising:

• a trench isolation region defining a first matrix direction and at least one first virtual linear line extending in a direction that traverses the first matrix direction, wherein the first matrix direction and the first virtual linear line define an angle of 2 to 40 degrees;
• and
• a plurality of dummy convex regions in the trench isolation region, wherein the dummy convex regions are disposed on the at least one first virtual linear line;
• wherein the trench isolation region further defines a second matrix direction perpendicular to the first matrix direction and at least one second virtual linear line extending in a direction that traverses the second matrix direction,
• wherein the second matrix direction and the at least one second virtual linear line define an angle of about 2 to 40 degrees, and wherein the dummy convex regions are disposed on the at least one second virtual linear line;
• wherein each of the dummy convex regions has a generally square shape and all the square shapes of the dummy convex regions in the trench isolation region are the same as each other in plan.

A semiconductor device comprising:

• a trench isolation region defining a first matrix direction and at least one first virtual linear line extending in a direction that traverses the first matrix direction, wherein the first matrix direction and the first virtual linear line define an angle 0(2 to 40 degrees;
• and
• a plurality of dummy convex regions in the trench isolation region, wherein the dummy convex regions are disposed on the at least one first virtual linear line;
• wherein the trench isolation region further defines a second matrix direction perpendicular to the first matrix direction and at least one second virtual linear line extending in a direction that traverses the second matrix direction,
• wherein the second matrix direction and the at least one second virtual linear line define an angle of about 2 to 40 degrees, and wherein the dummy convex regions are disposed on the at least one second virtual linear line;
• wherein at least two adjacent ones of the dummy convex regions disposed on the first virtual linear line have edges that partially oppose one another, and at least two adjacent ones of the dummy convex regions disposed on the second virtual linear line have edges that partially oppose one another;
• wherein each of the dummy convex regions has a generally rectangular shape and all the rectangular shapes of the dummy convex regions in the trench isolation region are the same as each other in plan;
• wherein the edges of the at least two adjacent ones of the dummy convex regions disposed on the first virtual linear line are spaced a first distance from one another, the first distance being shorter than each of the edges of the at least two adjacent ones of the dummy convex regions disposed on the first virtual linear line, and the edges of the at least two adjacent ones of the dummy convex regions disposed on the second virtual linear line are spaced a second distance from one another, the second distance being shorter than each of the edges of the at least two adjacent ones of the dummy convex regions disposed on the second virtual linear line.

A semiconductor device comprising:

• a trench isolation region defining a row direction and a column direction;
• and
• a plurality of dummy convex regions in the trench isolation region disposed in the row direction and the column direction,
• wherein each of the dummy convex regions has a generally square plan shape, and all the dummy convex regions in the trench isolation legion have the same shape as each other in plan,
• the dummy convex regions that are arranged next to one another in the row direction are spaced a first distance from one another, the first distance being about a half of an edge of each of the dummy convex regions, and
• the dummy convex regions that are arranged next to one another in the row direction are offset by a second distance from one another in the column direction, the second distance being about a half of an edge of each of the:
• dummy convex regions.

A semiconductor device comprising:

• a trench isolation region defining a row direction and a column, direction;
• and
• a plurality of dummy convex regions in the trench isolation region disposed in the row direction and the column direction,
• wherein each of the dummy convex regions has a generally square plan shape, and all the dummy convex regions in the trench isolation region have the same shape as each other in plan,
• the dummy convex regions that are arranged next to one another in the column direction are spaced a first distance from one another, the first distance being about a half of an edge of each of the dummy convex regions, and
• the dummy convex regions that are arranged next to one another in the column direction are offset by a second distance from one another in the row direction, the second distance being about a half of an edge of each of the dummy convex regions.

A semiconductor device comprising:

• a substrate;
• a plurality of effective convex regions formed on the substrate, the plurality of effective convex regions including a first subset of regions densely formed relative to one another, and a second subset of regions spaced apart from the first subset of regions by an isolation region;
• a first prohibited area defined between the isolation region and the first subset of regions;
• a second prohibited area defined between the isolation region and the second subset of regions;
• and
• a plurality of dummy convex regions formed in the isolation region in an array of parallel lines extending at an angle of 2 to 40 degrees relative to a boundary between said isolation region and said first prohibited area;
• wherein the first and second prohibited areas are free of dummy convex regions, and all the dummy convex regions in the isolation region have the same shape as each other in plan.