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US 6,605,831 B1Granted
Field-effect semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsMakoto Inai, Hidehiko Sasaki
Life of this patent
Estimating the term…
Abstract
A field-effect semiconductor device includes a channel layer; a barrier structure formed on the channel layer and including a plurality of semiconductor layers; a plurality of ohmic electrodes formed above the barrier structure; and a Schottky electrode formed on the barrier structure between the ohmic electrodes. The barrier structure has an electron-affinity less than that of the channel layer and includes at least two heavily doped layers and a lightly doped layer provided therebetween.
Claims11
A field-effect semiconductor device comprising:
- a channel layer;
- a barrier structure formed on the channel layer and comprising a plurality of semiconductor layers;
- a plurality of ohmic electrodes formed above the barrier structure;
- and
- a Schottky electrode formed on the barrier structure between the ohmic electrode;
- wherein the barrier structure has an electron-affinity less than that of the channel layer and comprises at least two heavily doped layers and a lightly doped layer provided therebetween;
- and
- wherein each of said plurality of semiconductor layers of said barrier structure is made of the same material.
5 more elements
A field-effect semiconductor device comprising:
- a channel layer;
- a barrier structure formed on the channel layer and comprising a plurality of semiconductor layers;
- a plurality of ohmic electrodes formed above the barrier structure;
- and
- a Schottky electrode formed on the barrier structure between the ohmic electrodes;
- wherein the barrier structure has an electron-affinity less than that of the channel layer and comprises at least two first type layers and a second type layer provided therebetween, the second type layer having a lower resistivity than either of the first type layers;
- and
- wherein each of said plurality of semiconductor layers of said barrier structure is made of the same material.
5 more elements
Dependencies are inferred from the claim text.