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US 6,605,548 B1Granted
Process for etching gallium nitride compound based semiconductors
AssigneeNational Research Council of Canada
InventorJennifer Bardwell
Life of this patent
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Abstract
A method for wet etching a gallium nitride compound-based semiconductor is disclosed. The method uses an aqueous solution containing an oxidizing agent such as peroxydisulfate ions. The sample and solution are irradiated with visible or ultraviolet light in order to promote the etching.
Claims8
A method for etching a gallium nitride compound-based semiconductor, comprising:
- applying to the semiconductor an aqueous solution containing an oxidizing agent, the solution and said oxidizing agent in combination capable of dissolving gallium oxide and consuming electrons generated during etching, wherein the oxidizing agent comprises peroxydisulfate ions, the solution comprising hydroxide or hydrogen ions.
Dependencies are inferred from the claim text.