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US 6,605,540 B2Granted
Process for forming a dual damascene structure
AssigneeTexas Instruments Incorporated
InventorsAbbas Ali, Ming Yang
Life of this patent
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Abstract
The invention describes a method for forming a dual damascene structure. An etch stop layer (150) is formed on a dielectric layer (140). A second dielectric layer (160) is formed on the etch stop layer (150) and an ARC layer (170) is formed the second dielectric layer. A first trench (185) and a second trench (195) are then simultaneously formed in the first and second dielectric layers (140) and (160) respectively.
Claims12
A method for forming a dual damascene structure, comprising:
- providing a silicon substrate containing one or more electronic devices;
- forming a first dielectric layer of a first thickness over said silicon substrate;
- forming a first etch stop layer over said first dielectric layer;
- forming a second dielectric layer of a second thickness over said first dielectric layer;
- forming an anti-reflective coating layer over said second dielectric layer;
- etching a first trench to a first depth in said second dielectric layer wherein the first depth is greater than the thickness of said second dielectric layer;
- and
- simultaneously etching a second trench to a second depth in said second dielectric layer and etching said first trench in said first dielectric layer wherein the second depth is approximately equal to the second thickness and the first depth is approximately equal to the first thickness.
5 more elements
A method for forming a copper filled dual damascene structure, comprising:
- providing a silicon substrate containing one or more electronic devices;
- forming a first dielectric layer of a first thickness over said silicon substrate;
- forming a first etch stop layer over said first dielectric layer;
- forming a second dielectric layer of a second thickness over said first dielectric layer;
- forming a silicon oxynitride anti-reflective coating layer over said second dielectric layer;
- etching a first trench to a first depth in said second dielectric layer and said first dielectric layer wherein the first depth is greater than the thickness of said second dielectric layer;
- and
- simultaneously etching a second trench to a second depth in said second dielectric layer and etching said first trench in said first dielectric layer wherein the second depth is approximately equal to the second thickness and the first depth is approximately equal to the first thickness.
5 more elements
Dependencies are inferred from the claim text.