Polishing of metal substrates
AssigneeRodel Holdings, Inc.
InventorsJinru Bian, Tirthankar Ghosh, Terence M. Thomas
Life of this patent
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Abstract
A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.
Claims1
A method of polishing a semiconductor substrate by chemical mechanical planarization, using a polishing pad and a polishing composition to remove excess metal from the substrate, comprising the steps of:
- introducing the polishing composition to the substrate, the polishing composition having benzotriazole concentration that raises a metal removal rate;
- and
- polishing with the polishing pad at a first polishing pressure that raises the metal removal rate and a second polishing pressure, that lowers the metal removal rate when polishig metal in a trough at the polishing pressure, the first polishihg pressure being greater than the second polishing pressure;
- and the polishing pressure from the polishing pad on metal in the trough being the second polishing pressure that removes metal from the trough at a lower removal rate, while the polishing simultaneously removes the excess metal with the first polishing pressure to remove excess metal at a raised removal rate.
Dependencies are inferred from the claim text.