Hole-filling technique using CVD aluminum and PVD aluminum integration
AssigneeApplied Materials, Inc.
InventorsTed Guo, Wei Shi, Liang-Yuh Chen
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Abstract
The present invention provides a method for filling an aperture on a substrate by depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture and then annealing the substrate in a low pressure chamber at a temperature below a melting point of the deposited metal film. The present invention further provides forming a planarized film over the void-free aperture by physical vapor depositing a metal film over the annealed film.
Claims28
A method for filling a sub-half micron aperture on a substrate, comprising:
- a) depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture at a pressure of between about 1 Torr and about 80 Torr;
- and
- b) annealing the substrate in a low pressure chamber at a pressure of not more than 1 Torr at a temperature below a melting point of the deposited metal film.
A method for filling an aperture on a substrate, comprising:
- a) depositing a metal film on the substrate to a sufficient thickness to bridge the aperture;
- and
- b) annealing the substrate in a low pressure chamber at a pressure less than 5 mTorr and at a temperature below a melting point of the metal film.
A method for filling an aperture on a substrate, comprising:
- a) depositing a metal film on the substrate to a sufficient thickness to bridge the aperture, wherein the metal is copper or aluminum and is deposited by electrochemical deposition;
- and
- b) annealing the substrate in a low pressure chamber at a temperature below a melting point of the metal film.
A method for filling a sub-half micron aperture on a substrate, comprising:
- a) chemical vapor depositing a metal film in the aperture on the substrate at a pressure of between about 1 Torr and about 80 Torr;
- b) annealing the substrate in a low pressure chamber at a pressure of not more than 1 Torr at a temperature below a melting point of the metal film;
- and
- c) physical vapor depositing a planarizing film over the metal film deposited on the substrate after the annealing of the substrate.
A method for filling a sub-half micron aperture on a substrate, comprising:
- a) depositing a metal film at a first pressure in the aperture on the substrate;
- and
- b) annealing the substrate at a second pressure less than the first pressure and at a temperature below a melting point of the deposited metal film.
Dependencies are inferred from the claim text.