Method for manufacturing thin-film capacitor for performing temperature compensation of junction capacitance of semiconductor device

A method for manufacturing a thin-film capacitor having a desired sheet capacitance and a desired temperature coefficient of capacitance by depositing a first dielectric thin-film having a temperature coefficient of capacitance with an absolute value of 50 ppm/° C. or less and a second dielectric thin-film having a negative temperature coefficient of capacitance, wherein the second dielectric thin-film has a structure composed of an aggregation of principal grain units each having a principal crystal grain and grain boundary layers surrounding the principal crystal grain, includes a plurality of principal grain units, and has a thickness tN, wherein tN={∈0τt0t/(C/S)}·{1/(τ/κ)}, (C/S represents the sheet capacitance, ∈0τt0t represents the desired temperature coefficient of capacitance), wherein τ represents the temperature coefficient of capacitance of the second dielectric thin-film, and κ represents the relative dielectric constant of the second dielectric thin-film, the method comprising:

• determining a target value of a grain size of the second dielectric thin-film by selecting the ratio a/2Δa satisfying the formula (τ/κ)/(τg/κg)>1 when the ratio b/a is constant, wherein (τg/κg) represents the ratio (τ/κ) of the principal crystal grain, a represents the width of each principal grain unit, which includes the principal crystal grain and the grain boundary layers having a thickness of Δa, in the lateral direction, 2Δa represents the thickness of each grain boundary layer, and b represents the height of the principal grain unit, and depositing the second dielectric thin-film so that the grain size becomes the target value to reduce the thickness of the second dielectric thin-film.

A method for manufacturing a thin-film capacitor having a desired sheet capacitance and a desired temperature coefficient of capacitance by depositing a first dielectric thin-film having a temperature coefficient of capacitance with an absolute value of 50 ppm/° C. or less and a second dielectric thin-film having a negative temperature coefficient of capacitance, wherein the second dielectric thin-film has a structure composed of an aggregation of principal grain units each having a principal crystal grain and grain boundary layers surrounding the principal crystal grain, includes a plurality of principal grain units, and has a thickness tN, wherein tN={∈0τt0t/(C/S)}·{1/(τ/κ)}, (C/S represents the sheet capacitance, ∈0τt0t represents the desired temperature coefficient of capacitance), wherein τ represents the temperature coefficient of capacitance of the second dielectric thin-film, and κ represents the relative dielectric constant of the second dielectric thin-film, the method comprising:

• depositing the second dielectric thin-film so that the ratio (τ(x)/κ(x))/(τg/κg) is 1.10 or more, wherein κ(x)/κg=γ[(x−1)2/(γx−1+κg/κgb)+{(2−1/x)/γ}/(κg/κgb)]/x, that is, κ(x) indicates that the κ is the function of x, τ(x)/τg=1−[(κg/κgb)·(1−τgb/τg)·{(κg/κgb)2(x−1)2+(γx−1+κg/κgb)2(2−1/x)γ}/(κg/κgb)·(γx−1+κg/κgb)·{(x−1)2·(γx−1+κg/κgb)·(2−1/x)/γ}], τg represents the temperature coefficient of capacitance of the principal crystal grain, κg represents the relative dielectric constant of the principal crystal grain, x, which is a dimensionless parameter, represents the ratio a/2Δa, γ, which is a dimensionless parameter, represents the ratio b/a, κgb represents the relative dielectric constant of the grain boundary, a represents the width of each principal grain unit, which includes the principal crystal grain and the grain boundary layers, in the lateral direction, Δa represents the thickness of each grain boundary layer, 2Δa represents the thickness of a grain boundary, and b represents the height of the principal grain unit.