Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTatsunori Kaneoka
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Abstract
In the manufacture of a semiconductor memory device having a capacitor formed by arranging a dielectric film including two layers of a silicon oxide film and a silicon nitride film between two electrode films, a thin dielectric film is formed by forming the silicon nitride film on a silicon conductive film by thermally nitriding said silicon conductive film using NO gas, then laminating a silicon oxide film on said silicon nitride film by a CVD method. The erasing/writing speed of semiconductor memory devices, in particular of flash memories or the like, is improved.
Claims6
A method of manufacturing a semiconductor memory device having a capacitor formed by arranging a dielectric film consisting of two layers of a silicon oxide film and a silicon nitride film between a silicon film and another electrode film;
- said method comprising the steps, for forming said dielectric film, of:
- thermally nitriding said silicon film by using NO gas to form a silicon nitride film on said silicon film;
- and
- thereafter laminating a silicon oxide film on said silicon nitride film.
Dependencies are inferred from the claim text.