Method of using damaged areas of a wafer for process qualifications and experiments, and system for accomplishing same

A method, comprising:

• providing a wafer;
• forming a plurality of die above said wafer;
• identifying a plurality of good die and at least one non-useful die from said plurality of die;
• and
• performing a test manufacturing process on said at least one non-useful die after said at least one non-useful die is identified but not on said plurality of good die, said test manufacturing process comprised of at least one of a stepper exposure process, an ion implant process and an etching process.

A method, comprising:

• providing a wafer comprised of silicon;
• forming a plurality of die above said wafer;
• identifying a plurality of good die and a plurality of non-useful die from said plurality of die;
• and
• performing a test manufacturing process on said plurality of non-useful die after said at least one non-useful die is identified but not on said plurality of good die, said test manufacturing process comprised of at least one of a stepper exposure process, an ion implant process and an etching process.

A method, comprising:

• providing a wafer;
• forming a plurality of die above said wafer;
• identifying a plurality of good die and at least one non-useful die from said plurality of die;
• and
• forming at least one test structure on said at least one non-useful die after said at least one non-useful die is identified but not on said plurality of good die.

A method, comprising:

• providing a wafer;
• forming a plurality of die above said wafer;
• identifying a plurality of good die and a plurality of non-useful die from said plurality of die;
• and
• forming at least one test structure on said plurality of non-useful die after said plurality of non-useful die are identified but not on said plurality of good die.