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US 6,605,413 B1Granted
Chemical treatment to strengthen photoresists to prevent pattern collapse
AssigneeAdvanced Micro Devices, Inc.
InventorsChristopher F. Lyons, Ramkumar Subramanian
Life of this patent
Estimating the term…
Abstract
There is provided a method for forming a photoresist layer for photolithographic applications which has increased structural strength. The photoresist layer is exposed through a mask and developed. The photoresist layer is then reacted with a stabilizer agent to change its material properties before the photoresist layer is dried. Also provided are a semiconductor fabrication method employing a stabilizer-treated photoresist and a composition for a photoresist that strengthens when exposed to a stabilizer agent.
Claims43
A method of forming a photoresist pattern, comprising the steps of:
- providing a surface;
- depositing a photoresist layer on the surface, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer;
- and
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid such that the photoresist layer is totally submerged in the liquid, to change the material properties of the photoresist layer.
3 more elements
A method of forming a photoresist pattern, comprising the steps of:
- providing a surface;
- depositing a photoresist layer on the surface, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer by removing the exposed area of photoresist under a developer solution;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties;
- and
- irradiating the photoresist layer with light,
- wherein the step of applying the stabilizing treatment to the photoresist layer increases the photoresist layer material strength.
5 more elements
A method of forming a photoresist pattern, comprising the steps of:
- providing a surface;
- depositing a photoresist layer on the surface, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer by removing the unexposed area of photoresist under a developer solution;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties;
- and
- irradiating the photoresist layer with light,
- wherein the step of applying the stabilizing treatment to the photoresist layer increases the photoresist layer material strength.
5 more elements
A method of forming a photoresist pattern, comprising the steps of:
- providing a surface;
- depositing a photoresist layer on the surface, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an exposed area of photoresist and an unexposed area of photoresist;
- developing the photoresist layer by removing the exposed area of photoresist under a developer solution;
- and
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties,
- wherein the step of applying the stabilizing treatment to the photoresist layer increases the photoresist layer material strength, and
- wherein the stabilizing treatment includes one or more of formaldehyde or hexamethylcyclotrisilazane.
5 more elements
A method of making a semiconductor device, comprising the steps of:
- forming at least one semiconductor device on a substrate;
- forming an insulating layer over the semiconductor device;
- forming a photoresist layer over the insulating layer, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an area of exposed photoresist and an area of unexposed photoresist;
- developing the photoresist layer to form an opening in the photoresist layer;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid such that the photoresist layer is totally submerged in the liquid, to change the material properties of the photoresist layer;
- forming a line in the insulating layer;
- and
- forming a conductive layer in the line.
6 more elements
A method of making a semiconductor device, comprising the steps of:
- forming at least one semiconductor device on a substrate;
- forming an insulating layer over the semiconductor device;
- forming a photoresist layer over the insulating layer, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an area of exposed photoresist and an area of unexposed photoresist;
- developing the photoresist layer to form an opening in the photoresist layer;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties;
- irradiating the photoresist layer with light;
- forming a line in the insulating layer;
- and forming a conductive layer in the line.
6 more elements
A method of making a semiconductor device, comprising the steps of:
- forming at least one semiconductor device on a substrate;
- forming an insulating layer over the semiconductor device;
- forming a photoresist layer over the insulating layer, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an area of exposed photoresist and an area of unexposed photoresist;
- developing the photoresist layer to form an opening in the photoresist layer;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid to change the material properties;
- forming a line in the insulating layer;
- and
- forming a conductive layer in the line,
- wherein the stabilizing treatment includes one or more of formaldehyde or hexamethylcyclotrisilazane.
7 more elements
A method of making a semiconductor device, comprising the steps of:
- forming at least one semiconductor device on a substrate;
- forming a conductive layer of conductive material on the substrate;
- forming a photoresist layer over th conductive layer, the photoresist layer having material properties;
- exposing the photoresist layer through a mask to create an area of exposed photoresist and an area of unexposed photoresist;
- developing the photoresist layer to form an opening in the photoresist layer;
- applying a stabilizing treatment to the photoresist layer while the photoresist layer is immersed in a liquid such that the photoresist layer is totally submerged in the liquid, to change the material properties of the photoresist layer;
- and
- removing the conductive layer under the opening in the photoresist layer to form a line of conductive material.
5 more elements
Dependencies are inferred from the claim text.