Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics
AssigneeMotorola, Inc.
InventorsWarren D. Grobman, Ruoping Wang, Alfred J. Reich
Life of this patent
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AssigneeMotorola, Inc.
InventorsWarren D. Grobman, Ruoping Wang, Alfred J. Reich
Estimating the term…
A method of patterning a wafer using four areas with differing exposure characteristics is disclosed. Two areas are phase shifted relative to the other two areas in order to create unexposed areas on the integrated circuit. Two different areas have polarizations orthogonal to each other, are frequency shifted relative to the two other areas, or are exposed by light at a time different than the two other areas to form exposed areas on the integrated circuit. The exposed areas are subsequently removed from the integrated circuit. In one embodiment, the four areas are on the same mask. The use of four areas with differing exposure characteristics allows for the patterning of more complicated and smaller geometric patterns on the integrated circuit than traditional patterning methods.
A lithographic mask for making an integrated circuit, the mask comprising:
A method for forming a pattern on an integrated circuit, the method comprising:
A method for making a pattern on an integrated circuit, the method comprising:
Dependencies are inferred from the claim text.