Organic bottom antireflective coating for high performance mask making using optical imaging
AssigneeApplied Materials, Inc.
InventorsMelvin W. Montgomery, Jeffrey A Albelo
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Abstract
The disclosure pertains to a method of optically fabricating a photomask using a direct write continuous wave laser, comprising a series of steps including applying an organic antireflection coating over a chrome-containing layer; applying a chemically-amplified DUV photoresist over the organic antireflection coating; and exposing a surface of the DUV photoresist to the direct write continuous wave laser. The direct write continuous wave laser operates at a wavelength of 244 nm or 257 nm. In an alternative embodiment, the organic antireflection coating may be applied over an inorganic antireflection coating which overlies the chrome containing layer.
Claims13
A method of optically patterning a photomask using a direct write continuous wave laser, comprising:
- a) applying an organic antireflection coating over a metal-containing layer;
- b) applying a chemically-amplified positive tone or negative tone DUV photoresist over said organic antireflection coating;
- and
- c) exposing a surface of said DUV photoresist to radiation from said direct write continuous wave laser.
A method of optically patterning a photomask using a direct write continuous wave laser, comprising:
- a) applying or creating an inorganic antireflection coating over a metal-containing layer;
- b) applying an organic antireflection coating over said inorganic antireflection coating;
- c) applying a chemically-amplified positive tone or negative tone DUV photoresist over said organic antireflection coating;
- and
- c) exposing a surface of said DUV photoresist to radiation from said direct write continuous wave laser.
Dependencies are inferred from the claim text.