Method of stacking polycrystalline silicon in process for single crystal production
AssigneeHemlock Semiconductor Corporation
InventorArvid Neil Arvidson
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Abstract
A process forms a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method. The process comprises placing into a crucible on the bottom a generally polygonal-shaped concentric array of rod-shaped polycrystalline silicon pieces having obliquely cut ends. The method of stacking the polycrystalline silicon pieces in the crucible allows for a denser packing of silicon in the crucible, can be accomplished in a quicker time then conventional packing methods, and has the potential for less damage to the crucible bottom, when comparing to standard packing methods using a size assortment of irregular shaped silicon pieces.
Claims22
A process for forming a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method comprising placing into a crucible on the bottom a generally polygonal-shaped concentric array of rod-shaped polycrystalline silicon pieces having obliquely cut ends.
A process for forming a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method, comprising
- (A) placing into a crucible on the bottom a generally polygonal-shaped concentric array of rod-shaped polycrystalline silicon pieces having obliquely cut ends,
- (B) placing into the crucible irregular shaped pieces of polycrystalline silicon,
- (C) melting the polycrystalline silicon within the crucible in an inert environment at an elevated temperature to form a source melt,
- (D) stabilizing the temperature of the crucible and the source melt to an equilibrium level suitable for crystal growth, and
- (E) pulling a single crystal silicon ingot from the source melt according to the Czochralski method.
A process for forming a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method comprising placing into a crucible on the bottom a generally parallel array of rod-shaped polycrystalline silicon pieces having obliquely cut ends.
A process for forming a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to the Czochralski method, comprising
- (a) placing into a crucible on the bottom a substantially parallel array of rod-shaped polycrystalline silicon pieces having obliquely cut ends,
- (b) placing into the crucible irregular shaped pieces of polycrystalline silicon,
- (c) melting the polycrystalline silicon within the crucible in an inert environment at an elevated temperature to form a source melt,
- (d) stabilizing the temperature of the crucible and the source melt to an equilibrium level suitable for crystal growth, and
- (e) pulling a single crystal silicon ingot from the source melt according to the Czochralski method.
Dependencies are inferred from the claim text.