Method and apparatus for accelerated determination of electromigration characteristics of semiconductor wiring

A test apparatus for determining the electromigration characteristics of a wiring structure in an integrated circuit device, comprising:

• a first line of wiring disposed in a principal plane of a semiconductor substrate;
• a second line of wiring connected to said first line of wiring, said second line of wiring disposed in a secondary plane which is substantially parallel to said principal plane;
• and
• a heat sink structure, located adjacent said first line of wiring, said heat sink structure capable of dissipating heat associated with passage of electrical current through said first line of wiring.

A semiconductor device, comprising:

• an integrated circuit formed upon a semiconductor substrate;
• and
• a wiring reliability test structure formed upon said semiconductor substrate for determining the electromigration characteristics of wiring structures included in said integrated circuit, said test structure further comprising:
• a first line of wiring disposed in a principal plane of said semiconductor substrate;
• a second line of wiring connected to said first line of wiring, said second line of wiring disposed in a secondary plane which is substantially parallel to said principal plane;
• and
• a heat sink structure, located adjacent said first line of wiring, said heat sink structure capable of dissipating heat associated with passage of electrical current through said first line of wiring.