Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor
AssigneeNational Semiconductor Corporation
InventorsMohamed N. Darwish, Alexei Sadovnikov, Reda Razouk
Life of this patent
Estimating the term…
Abstract
A low-power high-frequency bipolar transistor is formed to have a small self-aligned base region that reduces the base-to-collector capacitance, and small self-aligned base and emitter contacts that reduce the base-to-emitter capacitance and the base resistance. The base and emitter contacts are formed to have sub-lithographic feature sizes.
Claims2
A bipolar transistor formed on a wafer, the wafer having a buried layer and a first epitaxial layer of a first conductivity type, the first epitaxial layer being formed over the buried layer and having a surface and a smaller dopant concentration than the buried layer, the transistor comprising:
- an intrinsic base region of a second conductivity type formed on the first epitaxial layer, the intrinsic base region having a first side wall, a second side wall, and a top surface connected to the first side wall via a first notch and to the second side wall via a second notch;
- a layer of isolation material formed on the first epitaxial layer, the layer of isolation material contacting the first side wall and the second side wall of the intrinsic base region, and being formed over the first notch and the second notch;
- an intrinsic emitter region formed in the intrinsic base region;
- an extrinsic base formed on the layer of isolation material;
- an extrinsic emitter formed on the layer of isolation material;
- a conductive base spacer connected to the extrinsic base and the intrinsic base region, the conductive base spacer being formed over the first notch;
- and
- a conductive emitter spacer connected to the extrinsic emitter and the intrinsic base region, the conductive emitter spacer being formed over the second notch.
Dependencies are inferred from the claim text.