Antifuse structure suitable for VLSI application

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode having a first thickness and a substantially constant thermal conductivity throughout said first thickness;
• a second conductive electrode having a second thickness and a substantially constant thermal conductivity throughout said second thickness;
• an insulating antifuse layer located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer comprising materials selected from the group consisting of SiOX (for 0<X≦2), Si3NY (for 0<Y≦4), SiOXNY (for 0<X≦2 and 0<Y≦4/3), and Amorphous Silicon, said antifuse layer having a thickness much less than either said first thickness or said second thickness;
• and
• a barrier layer disposed between said second conductive electrode and said insulating antifuse layer;
• wherein said first conductive electrode and said second conductive electrode consist substantially of electrically conductive materials with thermal conductivities below 0.4 W cm−1 K−1.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode vertically oriented over an insulating film of the integrated circuit;
• a second conductive electrode vertically oriented over said first conductive electrode;
• an insulating antifuse layer located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer fabricated from SiOX, for 0<X≦2, and having a thickness in the range of about 20 Å to about 250 Å;
• wherein said first conductive electrode and said second conductive electrode are fabricated from Ti and wherein said first conductive electrode and said second conductive electrode have a thickness of no greater than 1,000 Å.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode;
• a second conductive electrode;
• and
• an insulating antifuse layer located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer fabricated from materials selected from the group consisting of SiOX, for 0≦x<2, Si3NY (for 0≦Y<4), SiOXNY (for 0<X≦2 and 0<Y≦4), and Amorphous Silicon,
• wherein said first conductive electrode has a thickness of no more than about 1000 Å.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode;
• a second conductive electrode;
• and
• an insulating antifuse layer of thickness from about 20 Å to about 250 Å located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer fabricated from materials selected from the group consisting of SiOX (for 0<X≦2), Si3NY (for 0<Y≦4), and SiOXNY (for 0<X≦2 and 0<Y≦4/3),
• wherein said first conductive electrode and said second conductive electrode have a thickness no greater than 1000 Å.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode;
• a second conductive electrode;
• and
• an insulating antifuse layer of thickness from about 50 Å to about 2000 Å located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer fabricated from amorphous silicon,
• wherein said first conductive electrode and said second conductive electrode have a thickness no greater than 1000 Å.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first electrode comprising a first material layer having a first thickness and a substantially constant thermal conductivity throughout said first thickness, said first material and said first thickness selected so as to produce thermal conditions in the vicinity of the antifuse during programming so as to control the radius of an antifuse filament to be formed when the antifuse is programmed;
• a second electrode comprising a second material layer having a second thickness and a substantially constant thermal conductivity throughout said second thickness, said second material and said second thickness selected so as to produce thermal conditions in the vicinity of the antifuse during programming so as to control the radius of an antifuse filament to be formed when the antifuse is programmed;
• and
• an insulating antifuse layer located between said first electrode and said second electrode, said insulating antifuse layer comprising materials selected from the group consisting of SiOX (for 0<X≦2), Si3NY (for 0<Y≦4), SiOXNY (for 0<X≦2 and 0<Y≦4/3), and Amorphous Silicon, said antifuse layer having a thickness much less than either said first thickness or said second thickness, and a barrier layer disposed between said second electrode and said insulating antifuse layer;
• and
• wherein said first electrode and said second electrode consist substantially of electrically conductive materials with thermal conductivities below 0.4 W cm−1 K−1.

An antifuse disposed on an integrated circuit, said antifuise comprising:

• a first conductive electrode having a first thickness of about 1000 Å and a substantially constant thermal conductivity throughout said first thickness, said first conductive electrode having a first and second surface;
• a second conductive electrode having a second thickness of about 1000 Å and a substantially constant thermal conductivity throughout said second thickness;
• an insulating antifuse layer located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer comprising materials selected from the group consisting of SiOX (for 0<X≦2), Si3NY (for 0<Y≦4), SiOXNY (for 0<X≦2 and 0<Y≦4/3), and Amorphous Silicon, said antifuse layer having a thickness within a range of about 20 Å and of about 2000 Å, said insulating antifuse layer facing said second surface of said first conductive electrode;
• an isolation layer disposed on a first surface of said first conductive electrode;
• and
• wherein said first conductive electrode and said second conductive electrode consist substantially of electrically conductive materials having thermal conductivities below 0.4 W cm−1 K−1, respectively.

An antifuse disposed on an integrated circuit, said antifuse comprising:

• a first conductive electrode having a first layer having a thermal conductivity below 0.4 W cm−1 K−1 and a second layer having high electrical conductivity;
• a second conductive electrode having a third layer having a thermal conductivity below 0.4 W cm−1 K−1 and a fourth layer having high electrical conductivity;
• an insulating antifuse layer located between said first conductive electrode and said second conductive electrode, said insulating antifuse layer comprising materials selected from the group consisting of SiOX (for 0<X≦2), Si3NY (for 0<Y≦4), SiOXNY (for 0<X≦2 and 0<Y≦4/3), and Amorphous Silicon, said antifuse layer having a thickness within a range of about 20 Å and of about 2000 Å, said insulating antifuse layer facing said second surface of said first conductive electrode;
• and
• wherein said first layer and said third layer consist substantially of electrically conductive materials having thermal conductivities below 0.4 W cm−1 K−1, respectively.