Capacitor with lower electrode located at the same level as an interconnect line
AssigneeSilicon Integrated Systems Corp.
InventorsChen-Chiu Hsue, Shyh-Dar Lee
Life of this patent
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AssigneeSilicon Integrated Systems Corp.
InventorsChen-Chiu Hsue, Shyh-Dar Lee
Estimating the term…
A capacitor in which the lower electrode and an interconnect line are located at the same level. The capacitor includes a first conductive line and a second conductive line on a substrate located at the same level, wherein the second conductive line defines a capacitor region and is used as a lower electrode of the capacitor; an insulating layer on the substrate, the first conductive line, and the second conductive line; and a third conductive line on the insulating layer in the capacitor region such that the third conductive line is used as an upper electrode of the capacitor. Since the lower electrode and an interconnect line can be in-situ (concurrently) formed to be located at the same level, one mask can be omitted compared with the conventional method, and production costs can be reduced.
A capacitor, comprising:
A capacitor, comprising:
Dependencies are inferred from the claim text.