Frontside contact on silicon-on-insulator substrate

A frontside contact on a silicon-on-insulator substrate, comprising in combination:

• a contact plug;
• a plurality of semiconductor layers including at least a field oxide layer and a buried oxide layer, wherein a hole is etched through the field oxide layer and the buried oxide layer exposing a substrate layer;
• at least one spacer disposed in the hole to provide additional doping;
• and
• a connection polysilicon providing a connection between the substrate layer and the contact plug, wherein the connection provides a means to bias the substrate layer.

A frontside contact on a silicon-on-insulator substrate, comprising in combination:

• a tungsten contact plug, wherein a metal pad is located substantially above the tungsten contact plug;
• a plurality of semiconductor layers including at least a field oxide layer and a buried oxide layer, wherein a hole is etched through the field oxide layer and the buried oxide layer exposing a substrate layer, wherein the substrate layer has a P+ implant region below the hole that is substantially doped with an implant of 1.25×1015 atoms/cm2 at 70 keV, and wherein a contact dielectric layer is substantially located above the field oxide layer;
• and
• a connection polysilicon providing a connection between the doped region of the substrate layer and the tungsten contact plug, wherein a silicide is substantially located between the connection polysilicon and the tungsten contact plug, and wherein the connection provides a means to bias the substrate layer.