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US 6,603,143 B2Granted
Semiconductor device and method for fabricating same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsYeon Woo Cheong, Young Kum Back
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Abstract
A semiconductor device includes a semiconductor substrate having a trench in its surface, an insulating film in the trench, a doped conductive layer on the insulating film, a gate insulation film and a gate electrode on the doped conductive layer over the trench, and source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
Claims14
A semiconductor device comprising:
- a semiconductor substrate having a trench in its surface;
- an insulating film in the trench;
- a doped conductive layer on the insulating film;
- a gate insulation film and a gate electrode on the doped conductive layer over the trench;
- and
- source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a trench in a surface of the semiconductor substrate;
- an insulating layer over the trench;
- a doped polysilicon layer on the insulating layer;
- a gate insulation layer on the doped polysilicon layer over the trench;
- a gate electrode on the doped polysilicon layer;
- and
- source and drain impurity regions in the surface of the semiconductor substrate at sides of the gate electrode.
5 more elements
Dependencies are inferred from the claim text.