Heating device, method for evaluating heating device and pattern forming method
AssigneeKabushiki Kaisha Toshiba
InventorsKei Hayasaki, Shinichi Ito, Kenji Kawano
Life of this patent
Estimating the term…
Abstract
A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.
Claims14
A method of heating a substrate with a resist film formed on the substrate, comprising:
- irradiating visible light or ultraviolet light on the resist film formed on the substrate, while heating the substrate with an amount of heat;
- detecting an intensity of a light reflected from the resist film formed on the substrate;
- and
- controlling the amount of heat applied to the substrate on the basis of the intensity of a detected, reflected light.
A method of heating a substrate with a resist film formed on the substrate, comprising:
- irradiating visible light or ultraviolet light on a plurality of portions of the resist film of the substrate, while heating the substrate with an amount of heat;
- detecting intensities of lights reflected from the plurality of portions of the resist film of the substrate;
- and
- controlling the amount of heat on the basis of the intensities of detected, reflected lights.
Dependencies are inferred from the claim text.