Loading patent…
AssigneeAir Products and Chemicals, Inc.
InventorsMatthias J. Jahl, Douglas W. Carson, Shantia Riahi, Raymond Nicholas Vrtis
Estimating the term…
The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of tetrakis(dimethylamino)titanium, tetrakis(diethylamino)titanium and mixtures thereof, reacted with ammonia to produce the titanium nitride on a semiconductor substrate by the addition of organic amines, such as dipropylamine, in a range of approximately 10 parts per million by weight to 10% by weight, preferably 50 parts per million by weight to 1.0 percent by weight, most preferably 100 parts per million by weight to 5000 parts per million by weight to the titanium containing precursor wherein prior to the reaction, said titanium containing precursor is subjected to a purification process to remove hydrocarbon impurities from the titanium containing precursor. It is shown that addition of small amounts of organic amines enhance the deposition rate of titanium nitride, while the presence of hydrocarbons, such as n-decane, retard the deposition rate of titanium nitride.
A process for increasing the rate of chemical vapor deposition of titanium nitride from tetrakis(dialkylamino)titanium reacted with ammonia to produce said titanium nitride on a semiconductor substrate by the addition of a deposition rate enhancing amount of an organic amine to said tetrakis(dialkylamino)titanium, wherein prior to the reaction, said tetrakis(dialkylamino)titanium is subjected to a purification process to remove hydrocarbon impurities from said tetrakis(dialkylamino)titanium to further increase such deposition rate.
A process for decreasing a rate of chemical vapor deposition of titanium nitride from the reaction of tetrakis(dialkylamino)titanium with ammonia to produce said titanium nitride on a semiconductor substrate comprising adding an amount of a hydrocarbon to the tetrakis(dialkylamino)titanium.
A process for increasing a rate of chemical vapor deposition of titanium nitride from the reaction of tetrakis(dialkylamino)titanium with ammonia to produce said titanium nitride on a semiconductor substrate comprising purifying the tetrakis(dialkylamino)titanium to reduce an amount of a hydrocarbon contained therein.
A process for increasing the rate of chemical vapor deposition of titanium nitride from the reaction of tetrakis(dialkylamino)titanium with ammonia to produce said titanium nitride on a semiconductor substrate by comprising adding an amount of an organic amine to said tetrakis(dialkylamino)titanium.
A process for increasing a rate of chemical vapor deposition of titanium nitride on a semiconductor substrate, the process comprising:
A process for decreasing a rate of chemical vapor deposition of titanium nitride on a semiconductor substrate comprising:
Dependencies are inferred from the claim text.