Self-adjusting thickness uniformity in SOI by high-temperature oxidation of SIMOX and bonded SOI

A SIMOX method for improving the uniformity of a SOI substrate, said method comprising the steps of:

• (a) implanting oxygen ions into a surface of a Si-containing substrate, said implanted oxygen ions having a sufficient concentration to form a buried oxide region in said Si-containing substrate;
• (b) soaking said Si-containing substrate containing implanted oxygen ions in an oxygen-containing ambient at a temperature of about 1000° C. or greater for a time period of about 0.5 hours or greater;
• and
• (c) annealing said soaked Si-containing substrate containing said implanted oxygen ions in an about 50 to about 100% oxygen-containing ambient under conditions that are capable of forming a SOI substrate having said buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer, and said SOI substrate, having thickness uniformity.

A SIMOX method for improving the uniformity of a SOI substrate, said method comprising the steps of:

• (a) implanting oxygen ions into a surface of a Si-containing substrate, said implanted oxygen ions having a sufficient concentration to form a buried oxide region in said Si-containing substrate;
• (b) annealing said Si-containing substrate containing said implanted oxygen ions under conditions that are capable of forming a SOI substrate having said buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer, said SOI substrate having thickness non-uniformity;
• and
• (c) subjecting said SOI substrate having thickness non-uniformity to a high-temperature oxidation process that is capable of improving the thickness uniformity of said SOI substrate, wherein said high-temperature oxidation is carried out at a temperature of about 1000° C. or above and in an about 50 to about 100% oxygen-containing ambient that promotes surface oxide growth and internal thermal oxidation.