Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chih Yang, Guan-Jie Shen, Yung-Yen Shieh
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Abstract
Within both a method for fabricating a bipolar transistor device and a method for fabricating a BiCMOS device there is: (1) formed contacting a base contact region a polysilicon base contact of a second polarity; and (2) formed contacting an emitter contact region a polysilicon emitter contact of a first polarity. Within the methods, there is then implanted into the polysilicon base contact a dose of a dopant of the second polarity while masking the polysilicon emitter contact. The methods provide for enhanced performance of the bipolar transistor device and the BiCMOS device.
Claims14
A method for fabricating a bipolar transistor device comprising:
- providing a semiconductor substrate having formed therein a collector well having a collector contact region of a first polarity;
- forming within the collector well a base well having a base contact region of a second polarity opposite the first polarity;
- defining within the base well an emitter contact region for an emitter of the first polarity;
- forming contacting the base contact region a polysilicon base contact of the second polarity and forming contacting the emitter contact region a polysilicon emitter contact of the first polarity;
- and
- implanting into the polysilicon base contact a dose of a dopant of the second polarity while masking the polysilicon emitter contact.
A method for fabricating a BiCMOS device comprising:
- providing a semiconductor substrate having formed therein an N-MOSFET device region, a P-MOSFET device region and a bipolar transistor device region, the bipolar transistor device region comprising:
- a collector well having a collector contact region of a first polarity;
- a base well formed within the collector well and having a base contact region of a second polarity opposite the first polarity;
- an emitter contact region defined within the base well for an emitter of the first polarity;
- forming contacting the base contact region a polysilicon base contact of the second polarity and forming contacting the emitter contact region a polysilicon emitter contact of the first polarity;
- and
- implanting into the polysilicon base contact a dose of a dopant of the second polarity while masking the polysilicon emitter contact.
Dependencies are inferred from the claim text.