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US 6,602,560 B2Granted
Method for removing residual fluorine in HDP-CVD chamber
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Lung Cheng, Wen-Kung Cheng, Ming-Hwa Yoo, Szu-An Wu, Ying-Long Wang, Pei-Fen Chou
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Abstract
A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.
Claims16
A method of removing residual fluorine in a high density plasma chemical vapor deposition (HDP-CVD) chamber used in processing fluorine-doped silicate glass comprising the steps of:
- forming a high density plasma in the presence of at least a microwave power, a silicon source, and an oxygen source whereby a silicon-rich oxide film having pores ranging from about 30 volume percent to about 90 volume percent of the total volume of said silicon-rich oxide film is deposited over at least part of the inner surface of the HDP-CVD chamber;
- conducting at least one deposition process of the fluorine-doped silicate glass in said HDP-CVD chamber generating residual fluorine for diffusing into said pores of said silicon-rich oxide film;
- flowing a process gas comprising NF3 into said HIDP-CVD chamber in the presence of microwave power to form a plasma thereby removing fluorine from said silicon-rich oxide film to form a fluorine-containing gas;
- and
- removing said fluorine-containing gas from said HDP-CVD chamber.
2 more elements
A method of removing residual fluorine in a HDP-CVD chamber comprising the steps of:
- forming a high density plasma in the presence of at least a microwave power, a silicon source, and an oxygen source whereby a first silicon-rich oxide film having pores ranging from about 30 volume percent to about 90 volume percent of the total volume of said first silicon-rich oxide film is deposited over at least part of the inner surface of the HDP-CVD chamber;
- conducting at least one deposition process of fluorine-doped silicate glass in said HDP-CVD chamber generating residual fluorine which diffuses into said pores of said silicon-rich oxide film during said at least one deposition process;
- flowing a process gas comprising NF3 into said HDP-CVD chamber in the presence of microwave power to form a plasma thereby removing fluorine from the first silicon-rich oxide film to form a fluorine-containing gas;
- removing said fluorine-containing gas from said HDP-CVD chamber;
- positioning a control wafer in the HDP-CVD chamber;
- and
- depositing a second silicon-rich oxide film over the control wafer.
4 more elements
Dependencies are inferred from the claim text.