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US 6,599,361 B2Granted
GaN selective growth on SiC substrates by ammonia-source MBE
AssigneeNational Research Council of Canada
InventorsHaipeng Tang, James B. Webb, Jennifer A. Bardwell
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Abstract
A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.
Claims16
A method of selectively depositing a GaN epilaxial layer on a substrate, comprising:
- selecting SiC as said substrate;
- growing an AlN seed layer on said substrate;
- patterning said AlN seed layer to expose portions of said substrate;
- and
- depositing said GaN epitaxial layer by ammonia-molecular beam epitaxy (MBE) on said SiC substrate such that growth occurs selectively on said patterned seed layer.
2 more elements
Dependencies are inferred from the claim text.