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US 6,598,610 B2Granted
Method of depositing a thick dielectric film
AssigneeDALSA Semiconductor Inc.
InventorsStephane Blain, Sylvie Harrison
Life of this patent
Estimating the term…
Abstract
Thick dielectric films are deposited on a substrate by building up a plurality of layers by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a reactor, each layer having a thickness less than the final thickness of the film to be deposited. The reactor is cleaned between the deposition of each layer. In this way, it is possible to form high quality, optical films.
Claims13
A method of depositing a thick dielectric film on a substrate, comprising:
- building up said dielectric film by sequentially depositing a plurality of layer on said substrate by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a showerhead reactor having a gas dispersion showerhead over said substrate, each layer having a thickness less than the final thickness of said film to be deposited, said final thickness being at least 20 microns and
- performing an etch clean of said reactor between the deposition of each layer of said thick to remove film build-up at least on said gas dispersion showerhead.
Dependencies are inferred from the claim text.