Method of manufacturing semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsKazuhiko Kobayashi, Kou Miyazaki
Life of this patent
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Abstract
A wiring pattern is divided into sets of long wiring (L1) and sets of short wiring (Ls) by comparison to a reference value. Layout rules of the sets of long wiring (L1) are made different from layout rules of the sets of short wiring (Ls) by using an effect of a Levenson type phase shift. Thereby, an interval (S1) between a set of long wiring (L1) and a set of short wiring (Ls) is made relatively narrower than an interval (S2) between a set of long wiring (L1) and a set of long wiring (L1).
Claims5
A manufacturing method of semiconductor integrated circuit device, comprising the steps of:
- dividing a set of signal wiring into a set of long wiring and a set of short wiring by comparison with a reference value;
- arranging said set of long wiring in parallel to said set of short wiring and in proximity to at least one side of said set of short wiring;
- forming a set of signal wiring in a wiring region included in a semiconductor chip;
- making a layout rule of said set of long wiring different from a layout rule of said set of short wiring;
- and
- making an interval between a set of long wiring and a set of short wiring provided in parallel and in proximity thereto relatively narrower than an interval between sets of long wiring arranged in parallel to each other, by using a Levenson type phase shifter to expose a pattern of said set of short wiring on a photomask.
A manufacturing method of semiconductor integrated circuit device, comprising the steps of:
- dividing a set of signal wiring into a set of long wiring and a set of short wiring by comparison with a reference value;
- arranging said set of long wiring in parallel to said set of short wiring and in proximity to at least one side of said set of short wiring;
- forming a set of signal wiring in a wiring region included in a semiconductor chip;
- making a layout rule of said set of long wiring different from a layout rule of said set of short wiring;
- and
- making a width of said set of short wiring 0.3 to 1.0 times as large as a width of said set of long wiring, by using a Levenson type phase shifter to expose a pattern of said set of short wiring on a photomask.
Dependencies are inferred from the claim text.