US 6,587,326 B2 · High-Q, variable capacitance capacitor

Abstract

High-Q, variable capacitance capacitor is formed by including a pocket of semiconductor material; a field insulating layer, covering the pocket; an opening in the field insulating layer, delimiting a first active area; an access region formed in the active area and extending at a distance from a first edge of the active area and adjacent to a second edge of the active area. A portion of the pocket is positioned between the access region and the first edge and forms a first plate; an insulating region extends above the portion of said body, and a polysilicon region extends above the insulating region and forms a second plate. A portion of the polysilicon region extends above the field insulating layer, parallel to the access region; a plurality of contacts are formed at a mutual distance along the portion of the polysilicon region extending above the field insulating layer.

Claims15

Dependent claims

A high-Q, variable capacitance capacitor, comprising:

a body of semiconductor material;
a field insulating layer, covering said body of semiconductor material;
a first opening in said field insulating layer delimiting a first active area;
a first access region formed in said first active area and extending at a distance from a first edge of said first active area;
a first portion of said body being comprised between said first access region and said first edge and forming a first plate;
a first insulating region, extending above said first portion of said body;
a polycrystalline region, of polycrystalline semiconductor material, extending above said first insulating region and forming a second plate;
and
a plurality of contacts extending at a distance from each other along said polycrystalline region.

6 more elements

Dependencies are inferred from the claim text.

High-Q, variable capacitance capacitor

Life of this patent

High-Q, variable capacitance capacitor

Life of this patent

Abstract

Claims15