Swapped drain structures for electrostatic discharge protection
AssigneeLSI Logic Corporation
InventorTodd A. Randazzo
Life of this patent
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Abstract
A method and apparatus for manufacturing an electrostatic discharge protection device. A first gate structure for the electrostatic device is formed. A first lightly doped drain and a second lightly doped drain for the electrostatic discharge protection device is formed. A second gate structure for a data path transistor is formed. A third lightly doped drain and a fourth lightly doped drain for a data path transistor is formed, wherein the first lightly doped drain and the second lightly doped drain have a higher doping level relative to the third lightly doped drain and the fourth lightly doped drain.
Claims23
A method for manufacturing a semiconductor device comprising:
- forming a first gate structure for the electrostatic device;
- forming a first lightly doped drain and a second lightly doped drain for the electrostatic discharge protection device;
- and
- forming a second gate structure for a data path transistor;
- and
- forming a third lightly doped drain and a fourth lightly doped drain for a data path transistor, wherein the first lightly doped drain and the second lightly doped drain have a higher doping level relative to the third lightly doped drain and the fourth lightly doped drain.
A method of manufacturing a semiconductor device comprising:
- forming a gate structure for the electrostatic discharge protection device;
- forming gate structures for a data path device and for core logic devices;
- forming a first photoresist layer, wherein an opening in the photoresist layer is present over the datapath device and the photoresist layer is present over the data path device and the core logic devices;
- performing a first lightly doped drain implant;
- removing the first photoresist layer;
- forming a second photoresist layer, wherein an opening in the photoresist layer is present over the electrostatic discharge protection device and over the core logic devices while the photoresist layer is present over the data path device;
- and
- performing a second lightly doped drain implant, wherein the electrostatic discharge protection device is triggered before the data path device in response to an electrostatic discharge event.
A method of manufacturing an electrostatic discharge protection device in an integrated circuit, the method comprising:
- forming a gate structure for the electrostatic discharge protection device;
- forming a gate structure for a data path device in the integrated circuit;
- forming gate structures for core logic devices in the integrated circuit;
- performing a first lightly doped drain implant on the data path device;
- and
- performing a second lightly doped drain implant on the electrostatic protection device and on the core logic devices, wherein the electrostatic discharge protection device is triggered before the data path device in response to an electrostatic discharge event.
Dependencies are inferred from the claim text.