Sputtering target and method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
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Abstract
A sputtering target comprising a main component having magnetic properties and consisting of a metal or an alloy, and a sub-component comprising at least one component selected from the group consisting of a nonmagnetic metal and a semiconductor. The main component may be a metal selected from the group consisting of Co, Ni and Fe or may be an alloy of at least two metals selected from the group consisting of Co, Ni and Fe. The sub-component may comprise at least one nonmagnetic metal selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Sn and Pb, or may comprise at least one semiconductor selected from the group consisting of Si and Ge, or may be a mixture of the at least one nonmagnetic metal and the at least one semiconductor.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a conductive thin film for contact, formed partially on said semiconductor substrate, said conductive thin film comprising a main component having magnetic properties and comprising a metal or an alloy;
- and
- a metal nitride film formed directly and selectively on said conductive thin film, said metal nitride film containing a sub-component comprising at least one metal capable of reducing a natural oxide film on said semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate;
- a source region formed in said semiconductor substrate;
- a drain region formed apart from said source region in said semiconductor substrate;
- a gate electrode formed on said semiconductor substrate between said source region and drain region;
- a conductive thin film for contact, formed directly on said source region and said drain region, said conductive thin film comprising a main component having magnetic properties and comprising a metal or an alloy;
- and
- a metal nitride film formed directly and selectively on said conductive thin film, said metal nitride film containing a sub-component comprising at least one metal capable of reducing a natural oxide film on said semiconductor substrate.
Dependencies are inferred from the claim text.