Feed-forward control of TCI doping for improving mass-production-wise statistical distribution of critical performance parameters in semiconductor devices

Abstract

When Tilted Channel Implant (TCI) is performed on transistor precursor structures having an etch-defined gate length (L2M) and a trim-defined sidewall thickness (SwM), mass production deviations may cause errors and cause shifts in the lateral placement and implant depth of TCI dopants. Countering adjustments to TCI dosage and TCI energy are automatically made in accordance with the invention. In one embodiment, a first linear or quasi-linear interpolation function is used having form: Energya=E0*(1+β*eSw/SwT), where multiplying factor β may either be a constant or a function of normalized sidewall error value, eSw/SwT. In the same embodiment, a second linear or quasi-linear interpolation function is used having form: Dosea=Dose0*(1+α(L2T−L2M)/L2T), where multiplying factor α is a constant or a function of normalized gate length error value, (L2T−L2M)/L2T.

Dependencies are inferred from the claim text.