Method and apparatus for directing constituents through a processing chamber

A method of fabricating an integrated circuit device comprising:

• loading a wafer onto a susceptor within a processing chamber;
• introducing a supply of process gas through a gas inlet, directing gas through a blocker plate and a perforated face plate to form a first flow region over the wafer;
• introducing a supply of purge gas from a second zone through a gap between the susceptor and a pumping plate into the first flow region;
• distributing the process gas and the purge gas into the pumping plate circumscribing the wafer, the pumping plate having an annular body-with an opening therethrough with a longitudinal component and a lateral component extending away from the opening and having a plurality of through holes circumferentially spaced about an axis along longitudinal component,
• wherein the pumping plate is displaced in the chamber such that the longitudinal component and the wall of the chamber define a channel of a second flow region and wherein said second flow region is in communication with a pumping channel through a first and second opening through said lateral component.

An apparatus for fabricating an integrated circuit device comprising:

• an enclosure housing a processing chamber, the enclosure defining a gas inlet in communication with the processing chamber for receiving processing gas and a gas outlet for discharging the processing gas;
• a susceptor disposed within the processing chamber for supporting a wafer thereon;
• a pumping plate having an annular body with an opening therethrough with a longitudinal component and a lateral component extending away from the opening and having a plurality of through holes circumferentially spaced about an axis along longitudinal component and said lateral component having two openings formed therein, and
• the pumping plate is displaced in the chamber such that an area through the opening in the pumping plate defines a first flow region over a surface of the susceptor and the longitudinal component and the wall of the chamber define a channel of a second flow region wherein during processing, a gap exists between the susceptor and the pumping plate to allow a flow of a gas from a second zone beneath the susceptor into the first flow region.

An apparatus for fabricating an integrated circuit device comprising:

• an enclosure housing a processing chamber, the enclosure defining a gas inlet in communication with the processing chamber for receiving processing gas and a gas outlet for discharging the processing gas;
• a susceptor disposed within the processing chamber for supporting a wafer thereon;
• and
• a pumping plate having an annular body with an opening therethrough with a longitudinal component and a lateral component extending away from the opening and having a plurality of through holes circumferentially spaced about an axis along the longitudinal component and wherein the lateral component comprises two lateral langes,
• wherein the pumping plate is displaced in the chamber such that an area through the opening in the pumping plate defines a first flow region over a surface of the susceptor and the longitudinal component and the wall of the chamber define a channel of a second flow region, the enclosure has a superior surface that defines a superior surface of the chamber, the gas inlet communicating with the chamber through the superior surface, the apparatus further comprising:
• a source plate coupled adjacent the superior surface and having a perforated area corresponding with the area defined by the opening in the annular body of the pumping plate, and the source plate is a first source plate having a first surface adjacent the superior surface of the chamber and an opposing second surface, the apparatus further comprising a second source plate coupled adjacent the second surface of the first source plate, the second source plate having a perforated area corresponding with the area defined by the opening in the annular body of the pumping plate, wherein openings of the perforated area of the second source plate comprise a smaller diameter than openings of the perforated area of the first source plate.